N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit |
| Drain-source voltage | VDSS | 500 | V |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 500 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current | DC (Note 1) | ID | 8 | A |
| Pulse (t = 1 ms) (Note 1) | IDP | 32 | A |
| Drain power dissipation (Tc = 25°C) | PD | 40 | W |
| Single pulse avalanche energy (Note 2) | EAS | 312 | mJ |
| Avalanche current | IAR | 8 | A |
| Repetitive avalanche energy (Note 3) | EAR | 4 | mJ |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -55~150 | °C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
| Characteristics | Symbol | Max | Unit |
| Thermal resistance, channel to case | Rth (ch-c) | 3.125 | °C/W |
| Thermal resistance, channel to ambient | Rth (ch-a) | 62.5 | °C/W |
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Weight : 1.7 g (typ.)
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N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor Images
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